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| SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - MARCH 1999 FEATURES FCX690B C * * * * 2W POWER DISSIPATION 6A Peak Pulse Current Gain of 400 @IC=1Amp Very Low Saturation Voltage Complimentary Type Partmarking Detail - FCX790A 690 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 45 45 5 6 2 1 2 -55 to +150 UNIT V V V A A W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX690B ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 500 400 150 150 200 16 33 1300 MHz pF pF ns ns Min 45 45 5 0.1 0.1 80 300 0.9 0.85 Typ Max UNIT V V V A A CONDITIONS. IC=100A IC=10mA* IE=100A VCB=35V VEB=4V IC=0.1A, IB=0.5mA * IC=1A, IB=5mA * IC=1A, IB=10mA * IC=1A, VCE=2V * IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB1=IB2=50mA VCC=10V mV mV V V fT Cibo Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX690B TYPICAL CHARACTERISTICS IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25C 0.8 -55C +25C +100C +175C 0.8 IC/IB=100 VCE(sat) - (Volts) 0.6 VCE(sat) - (Volts) 0.6 0.4 0.4 0.2 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 +100C +25C -55C VCE=2V 1.5K 1.6 hFE - Typical Gain VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55C +25C +100C +175C IC/IB=100 1K 500 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 VBE(sat) v IC Single Pulse Test at Tamb=25C 1.6 1.4 IC - Collector Current (Amps) -55C +25C +100C +175C VCE=2V VBE - (Volts) 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 0.1 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area |
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